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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29723


    Title: PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS
    Authors: CHU,CC;CHAN,YJ;YUANG,RH;CHYI,JI;LEE,CT
    Contributors: 光電科學研究中心
    Keywords: INGAAS
    Date: 1995
    Issue Date: 2010-06-30 15:39:34 (UTC+8)
    Publisher: 中央大學
    Abstract: A thin (200 Angstrom) WSix film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55 mu m. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared with the conventional thick metal gate MSM detectors.
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[光電科學研究中心] 期刊論文

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