In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si

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Title:	In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si
Authors:	Chou,Yi-Chia;Wu,Wen-Wei;Cheng,Shao-Liang;Yoo,Bong-Young;Myung,Nosang;Chen,Lih J.;Tu,K. N.
Contributors:	化學工程與材料工程研究所
Keywords:	FIELD-EFFECT TRANSISTOR;SILICON NANOWIRES;ELECTRONIC DEVICES;BUILDING-BLOCKS;SINGLE;SURFACE;HETEROSTRUCTURES;NANOTUBES;NICKEL;FUTURE
Date:	2008
Issue Date:	2010-07-06 16:15:15 (UTC+8)
Publisher:	中央大學
Abstract:	The formation of CoSi and COSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron micros
Relation:	NANO LETTERS????
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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