In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si

NCU Institutional Repository > 工學院 > 化學工程與材料工程研究所 > 期刊論文 > Item 987654321/30238

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/30238

题名:	In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano COSi2 in nanowires of Si
作者:	Chou,Yi-Chia;Wu,Wen-Wei;Cheng,Shao-Liang;Yoo,Bong-Young;Myung,Nosang;Chen,Lih J.;Tu,K. N.
贡献者:	化學工程與材料工程研究所
关键词:	FIELD-EFFECT TRANSISTOR;SILICON NANOWIRES;ELECTRONIC DEVICES;BUILDING-BLOCKS;SINGLE;SURFACE;HETEROSTRUCTURES;NANOTUBES;NICKEL;FUTURE
日期:	2008
上传时间:	2010-07-06 16:15:15 (UTC+8)
出版者:	中央大學
摘要:	The formation of CoSi and COSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron micros
關聯:	NANO LETTERS????
显示于类别:	[化學工程與材料工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	368	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing