Stress relaxation in GaN by transfer bonding on Si substrates

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Title:	Stress relaxation in GaN by transfer bonding on Si substrates
Authors:	Hsu,S. C.;Pong,B. J.;Li,W. H.;Beechem,Thomas E.,III;Graham,Samuel;Liu,C. Y.
Contributors:	化學工程與材料工程研究所
Keywords:	LIGHT-EMITTING-DIODES;LASER LIFT-OFF;SAPPHIRE
Date:	2007
Issue Date:	2010-07-06 16:17:43 (UTC+8)
Publisher:	中央大學
Abstract:	The stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques. By increasing the Au bonding thickness from 1 to 40 mu m, the high compressive stress
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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