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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/30783


    Title: Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
    Authors: Johnson,JW;Zhang,AP;Luo,WB;Ren,F;Pearton,SJ;Park,SS;Park,YJ;Chyi,JI
    Contributors: 化學工程與材料工程研究所
    Keywords: TEMPERATURE-DEPENDENCE;PERFORMANCE;TRANSISTORS
    Date: 2002
    Issue Date: 2010-07-06 16:27:17 (UTC+8)
    Publisher: 中央大學
    Abstract: Schottky rectifiers with implanted p(+) guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-30 Omega(.)cm(2)
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[化學工程與材料工程研究所] 期刊論文

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