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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/30792


    Title: The growth of an epitaxial Mg-Al spinel layer on sapphire by solid-state reactions
    Authors: Liu,CM;Chen,JC;Chen,CJ
    Contributors: 機械工程研究所
    Keywords: SYSTEM MGO-AL2O3;ALUMINUM-OXIDE;THIN-FILMS;INTERDIFFUSION;MAGNESIUM;ORIENTATION;DIFFUSION;INTERFACE;MECHANISM;MGAL2O4
    Date: 2005
    Issue Date: 2010-07-06 16:27:29 (UTC+8)
    Publisher: 中央大學
    Abstract: In this work an epitaxial Mg-Al spinel layer was successfully grown on a sapphire single crystal surface by solid-state reactions. An Mg film (15 mu m) was sputtered onto the sapphire crystal using RF magnetron sputtering. An epitaxial Mg-Al spinel layer
    Relation: JOURNAL OF CRYSTAL GROWTH
    Appears in Collections:[機械工程研究所] 期刊論文

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