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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31787


    Title: An experimental study on high-frequency substrate noise isolation in BiCMOS technology
    Authors: Yeh,Ping-Chun;Chiou,Hwann-Kaeo;Lee,Chwan-Ying;Yeh,John;Tang,Denny;Chern,John
    Contributors: 電機工程研究所
    Date: 2008
    Issue Date: 2010-07-06 18:11:34 (UTC+8)
    Publisher: 中央大學
    Abstract: In this letter, four substrate noise isolation structures in standard 0.18-mu m SiGe bipolar CMOS technology were investigated using S-parameter measurements. The experimental and simulated results on different isolation structures, such as triple-well p-
    Relation: IEEE ELECTRON DEVICE LETTERS????
    Appears in Collections:[電機工程研究所] 期刊論文

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