Design of broadband highly linear IQ modulator using a 0.5 mu m E/D-PHEMT process for millimeter-wave applications

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Title:	Design of broadband highly linear IQ modulator using a 0.5 mu m E/D-PHEMT process for millimeter-wave applications
Authors:	Chang,Hong-Yeh
Contributors:	電機工程研究所
Keywords:	BPSK
Date:	2008
Issue Date:	2010-07-06 18:12:11 (UTC+8)
Publisher:	中央大學
Abstract:	A broadband highly linear IQ modulator using a 0.5-mu m enhancement/depletion-pseudomorphic high-electron mobility transistor process is presented in this letter. An innovative broadside/edge coupler is proposed to apply to the IQ modulator. The chip size
Relation:	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS????
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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