Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/31832

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31832

Title:	Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots
Authors:	Tzeng,S. S.;Li,P. W.
Contributors:	電機工程研究所
Keywords:	CHARGE-LIMITED CURRENTS;SIGE/SI-ON-INSULATOR;GE NANOCRYSTALS;SELECTIVE OXIDATION;CARRIER TRANSPORT;SIO2 FILM;PHOTOLUMINESCENCE;PHOTODETECTOR;NANOPARTICLES;TEMPERATURE
Date:	2008
Issue Date:	2010-07-06 18:12:32 (UTC+8)
Publisher:	中央大學
Abstract:	Metal-oxide-semiconductor (MOS) diodes with zero-, one- or three-layer Ge quantum dots (QDs) embedded in the gate oxide are fabricated for visible to near-ultraviolet photodetection. Ge dots are formed by thermally oxidizing one or three stacks of amorpho
Relation:	NANOTECHNOLOGY
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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