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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31842

    Title: High performance SiGe HBT power unit-cell for S-Band open collector adaptive bias power amplifier design
    Authors: Chiou,Hwann-Kaeo;Yeh,Ping-Chun;Lin,Kuei-Cheng
    Contributors: 電機工程研究所
    Keywords: BICMOS
    Date: 2008
    Issue Date: 2010-07-06 18:12:45 (UTC+8)
    Publisher: 中央大學
    Abstract: A SiGe heterojunction bipolar transistor (HBT) power unit-cell for S-Band high efficiency linear power amplifier with an open collector adaptive bias linearizer was designed and fabricated in this paper. The unit-cell was investigated in both electrical a
    Appears in Collections:[電機工程研究所] 期刊論文

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