Improved SiGe power HBT characteristics by emitter layout

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/31859

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31859

Title:	Improved SiGe power HBT characteristics by emitter layout
Authors:	Huang,Shou-Chien;Chang,Chia-Tsung;Pan,Chun-Ting;Hsin,Yue-Ming
Contributors:	電機工程研究所
Keywords:	HETEROJUNCTION BIPOLAR-TRANSISTORS;DESIGN
Date:	2008
Issue Date:	2010-07-06 18:13:07 (UTC+8)
Publisher:	中央大學
Abstract:	A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, in dc
Relation:	SOLID-STATE ELECTRONICS????
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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