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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31886


    Title: Optoelectronic characteristics of direct-current and alternating-current white thin-film light-emitting diodes based on hydrogenated amorphous silicon nitride film
    Authors: Yeh,Rong-Hwei;Yu,Tai-Rong;Chung,Te-Cheng;Lo,Shih-Yung;Hong,Jyh-Wong
    Contributors: 電機工程研究所
    Keywords: VISIBLE ELECTROLUMINESCENCE;FREQUENCY-RESPONSE;LAYER
    Date: 2008
    Issue Date: 2010-07-06 18:13:43 (UTC+8)
    Publisher: 中央大學
    Abstract: Direct-current and alternating-current white thin-film light-emitting diodes (DCW and ACW TFLEDs) have been fabricated and demonstrated with the intrinsic hydrogenated amorphous silicon nitride (i-a-SiN:H) film as the luminescent layer. The achievable bri
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES????
    Appears in Collections:[電機工程研究所] 期刊論文

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