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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31920


    Title: Transverse-junction superluminescent diodes at the 1.1 mu m wavelength regime
    Authors: Guol,Shi-Hao;Wang,Jr-Hung;Wu,Yu-Huei;Lin,Wei;Yang,Ying-Jay;Sun,Chi-Kuang;Shi,Jin-Wei
    Contributors: 電機工程研究所
    Keywords: OPTICAL COHERENCE TOMOGRAPHY;LIGHT-EMITTING-DIODES;EMISSION;INJECTION;LASERS;GAIN
    Date: 2008
    Issue Date: 2010-07-06 18:14:29 (UTC+8)
    Publisher: 中央大學
    Abstract: We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 mu m. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in
    Relation: OPTICS EXPRESS????
    Appears in Collections:[電機工程研究所] 期刊論文

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