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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32031

    Title: Dual-gate E/E- and E/D-mode AlGaAs/InGaAs pHEMTs for microwave circuit applications
    Authors: Lin,Dong-Ming;Lin,Cheng-Kuo;Huang,Fan-Hsiu;Wu,Jia-Shyan;Wang,Wen-Kai;Tsai,Yu-Yi;Chan,Yi-Jen;Wang,Yu-Chi
    Contributors: 電機工程研究所
    Keywords: VOLTAGE;FETS
    Date: 2007
    Issue Date: 2010-07-06 18:16:58 (UTC+8)
    Publisher: 中央大學
    Abstract: In this paper, we developed dual-gate enhancement/ enhancement-mode (E/E-mode) and enhancement/depletionmode (E/D-mode) AlGaAs/InGaAs pHEMTs for high-voltage and high-power device applications. These dual-gate devices had a higher breakdown voltage (V-br)
    Appears in Collections:[電機工程研究所] 期刊論文

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