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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32038

    Title: Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer
    Authors: Chiu,Pei-Chin;Liu,Wei-Sheng;Shiau,Meng-Jie;Chyi,Jen-Inn;Chen,Wen-Yen;Chang,Hsing-Szu;Hsu,Tzu-Min
    Contributors: 電機工程研究所
    Date: 2007
    Issue Date: 2010-07-06 18:17:09 (UTC+8)
    Publisher: 中央大學
    Abstract: The optical properties of InAs quantum dots (QDs) with a GaAs, an InAlAs, or an InAlAsSb overgrown layer are studied. For the InAs QDs with an InAlAsSb overgrown layer, their room temperature photoluminescence intensity is enhanced by as much as 4.5-fold
    Appears in Collections:[電機工程研究所] 期刊論文

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