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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32043


    Title: Geometry effect on SiGe heterojunction bipolar transistor unit cell for 1 W high-efficiency RF power amplifier applications
    Authors: Chiou,Hwann-Kaeo;Yeh,Ping-Chun;Lee,Chwan-Ying;Yeh,John;Tang,Denny;Chern,John
    Contributors: 電機工程研究所
    Keywords: THERMAL DESIGN;LOW-VOLTAGE;PERFORMANCE;HBTS;COMMUNICATION;TECHNOLOGY;SIGEBICMOS;BREAKDOWN;BICMOS
    Date: 2007
    Issue Date: 2010-07-06 18:17:18 (UTC+8)
    Publisher: 中央大學
    Abstract: The effect of geometry on the RF power performance of silicon-germanium heterojunction bipolar transistor (SiGe HBT) unit cells is investigated using various emitter finger spacing (S). Two unit cells, namely, HBT-1 and HBT-2 with the same emitter area of
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
    Appears in Collections:[電機工程研究所] 期刊論文

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