Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz

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題名:	Impact-ionization-induced bandwidth-enhancement of a Si-SiGe-based avalanche photodiode operating at a wavelength of 830 nm with a gain-bandwidth product of 428 GHz
作者:	Shi,J.-W.;Wu,Y.-S.;Li,Z.-R.;Chen,P.-S.
貢獻者:	電機工程研究所
關鍵詞:	OPTICAL RECEIVER;PHOTODETECTORS;PERFORMANCE;1.55-MU-M
日期:	2007
上傳時間:	2010-07-06 18:17:36 (UTC+8)
出版者:	中央大學
摘要:	We demonstrate a high-performance Si-SiGe-based vertical-illuminated avalanche photodiode (APD) operating in the 830-nm wavelength regime. The trade-off between the gain and bandwidth performance of a traditional APD can be overcome due to the impact-ioni
關聯:	IEEE PHOTONICS TECHNOLOGY LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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