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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32059


    Title: InGaAsSb/InP double heterojunction bipolar transistors grown by solid-source molecular beam epitaxy
    Authors: Chen,Shu-Han;Wang,Sheng-Yu;Hsieh,Rei-Jay;Chyi,Jen-Inn
    Contributors: 電機工程研究所
    Keywords: INP/GAASSB/INP DOUBLE HBTS;BAND OFFSETS;BVCEO;GHZ
    Date: 2007
    Issue Date: 2010-07-06 18:17:41 (UTC+8)
    Publisher: 中央大學
    Abstract: This letter investigates the dc characteristics of a double heterojunction bipolar transistor (DHBT) with a compressively strained InGaAsSb base, which is grown by solid-source molecular beam epitaxy. The novel InP/InGaAsSb HBT has a lower base/emitter (B
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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