Performance consideration of MOS and junction diodes for varactor application

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32089

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32089

Title:	Performance consideration of MOS and junction diodes for varactor application
Authors:	Chan,Yi-Jen;Huang,Chi-Feng;Wu,Chun-Chieh;Chen,Chun-Hon;Chao,Chih-Ping
Contributors:	電機工程研究所
Keywords:	PHASE NOISE;CMOS;DESIGN;VCOS
Date:	2007
Issue Date:	2010-07-06 18:18:22 (UTC+8)
Publisher:	中央大學
Abstract:	The engineering and tradeoffs for quality factor, capacitance tuning ratio, capacitance mismatch, and low-frequency noise for different varactor device structures, geometry sizes, and operations have been compared to provide a comprehensive guideline of a
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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