Temperature-dependent study of n-ZnO/p-GaN diodes

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Title:	Temperature-dependent study of n-ZnO/p-GaN diodes
Authors:	Hsueh,Kuang-Po;Huang,Shou-Chien;Li,Ching-Tai;Hsin,Yue-Ming;Sheu,Jinn-Kong;Lai,Wei-Chih;Tun,Chun-Ju
Contributors:	電機工程研究所
Date:	2007
Issue Date:	2010-07-06 18:19:04 (UTC+8)
Publisher:	中央大學
Abstract:	This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO/p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800 degrees
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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