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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32181

    Title: Enhanced thermal stability and emission intensity of InAs quantum dots covered by an InGaAsSb strain-reducing layer
    Authors: Liu,Wei-Sheng;Kuo,David M. T.;Chyi,Jen-Inn;Chen,Wen-Yen;Chang,Hsing-Szu;Hsu,Tzu-Min
    Contributors: 電機工程研究所
    Date: 2006
    Issue Date: 2010-07-06 18:20:29 (UTC+8)
    Publisher: 中央大學
    Abstract: An InGaAsSb overgrown layer, i.e., strain-reducing layer (SRL), is adopted to increase the emission intensity of InAs quantum dots (QDs) and extend the emission wavelength to as long as 1.42 mu m. InAs QDs capped with InGaAsSb SRL also exhibit a thermal a
    Appears in Collections:[電機工程研究所] 期刊論文

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