High performance spiral inductor on deep-trench-mesh silicon substrate

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32189

Title:	High performance spiral inductor on deep-trench-mesh silicon substrate
Authors:	Tu,Hsin-Lung;Chen,I. -Shan;Yeh,Ping-Chun;Chiou,Hwann-Kaeo
Contributors:	電機工程研究所
Date:	2006
Issue Date:	2010-07-06 18:20:43 (UTC+8)
Publisher:	中央大學
Abstract:	This letter presented the octagonal spiral inductors on deep-trench-mesh substrate which obtained a high self resonant frequency (f(res)) and high peak quality factor (Q(peak)) in a 0.35-mu m 3P3M SiGe BiCMOS process. The main advantages of the deep-trenc
Relation:	IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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