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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32198


    Title: InP-based transverse junction light-emitting diodes for white-light generation at infrared wavelengths
    Authors: Shi,J. -W.;Hung,T. -J;Chen,Y. -Y.;Wu,Y. -S.;Lin,Wei;Yang,Ying-Jay
    Contributors: 電機工程研究所
    Keywords: SEPARATE-CONFINEMENT HETEROSTRUCTURE;QUANTUM-WELLS;LASER;BANDWIDTH;DOTS
    Date: 2006
    Issue Date: 2010-07-06 18:20:55 (UTC+8)
    Publisher: 中央大學
    Abstract: We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of tra
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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