RF power characteristics of SiGeHBTs at cryogenic temperatures

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Title:	RF power characteristics of SiGeHBTs at cryogenic temperatures
Authors:	Hsieh,Meng-Wei;Hsin,Yue-Ming;Liang,Kung-Hao;Chan,Yi-Jen;Tang,Denny
Contributors:	電機工程研究所
Keywords:	BIPOLAR-TRANSISTORS
Date:	2006
Issue Date:	2010-07-06 18:21:34 (UTC+8)
Publisher:	中央大學
Abstract:	This paper investigates the temperature dependence (from 77 to 300 K) of dc, ac, and power characteristics for n-p-n SiGe heterojunction bipolar transistors (HBTs) with and without selectively implanted collector (SIC). In SiGe HBTs without SIC, the valan
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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