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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32249


    Title: 1.55 mu m emission from InAs quantum dots grown on GaAs
    Authors: Hsieh,TP;Chiu,PC;Chyi,JI;Yeh,NT;Ho,WJ;Chang,WH;Hsu,TM
    Contributors: 電機工程研究所
    Keywords: CHEMICAL-VAPOR-DEPOSITION;LAYER;LASERS;MATRIX
    Date: 2005
    Issue Date: 2010-07-06 18:22:17 (UTC+8)
    Publisher: 中央大學
    Abstract: We report a comparative study on the growth of InAs quantum dots (QDs) on GaAs by metalorganic chemical vapor deposition using triethylgallium (TEGa) and trimethylgallium (TMGa) for the GaAs cap layer. QDs exhibit 1.3 mu m photoluminescence (PL) at room t
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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