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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32274


    Title: BCB-bridged distributed wideband SPST switch using 0.25-mu m In0.5Al0.5As-In0.5Ga0.5As metamorphic HEMTs
    Authors: Lin,CK;Wang,WK;Chan,YJ;Chiou,HK
    Contributors: 電機工程研究所
    Keywords: HIGH-PERFORMANCE;GAAS;TRANSISTORS;MODFETS;GHZ
    Date: 2005
    Issue Date: 2010-07-06 18:22:55 (UTC+8)
    Publisher: 中央大學
    Abstract: In(0.5)AI(0.5)As-In0.5Ga0.5As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-kappa. benzocyclobutene (BCB) bridged technology. The current g
    Relation: IEEE TRANSACTIONS ON ELECTRON DEVICES
    Appears in Collections:[電機工程研究所] 期刊論文

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