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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32285


    Title: Demonstration of a dual-depletion-region electroabsorption modulator at 1.55-mu m wavelength for high-speed and low-driving-voltage performance
    Authors: Shi,JW;Hsieh,CA;Shiao,AC;Wu,YS;Huang,RH;Chen,SH;Tsai,YT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: BANDWIDTH;MODULES;INP
    Date: 2005
    Issue Date: 2010-07-06 18:23:10 (UTC+8)
    Publisher: 中央大學
    Abstract: We demonstrate a novel structure of electroabsorption modulator (EAM) at a 1.55-mu n wavelength: the dual-depletion-region EAM. After an n(+) delta-doped layer was inserted into the thick intrinsic region (550 nm) of a tradition p-i-n modulator, the trade
    Relation: IEEE PHOTONICS TECHNOLOGY LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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