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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32296


    Title: Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection
    Authors: Chen,WM;Buyanova,IA;Nishibayashi,K;Kayanuma,K;Seo,K;Murayama,A;Oka,Y;Thaler,G;Frazier,R;Abernathy,CR;Ren,F;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: LIGHT-EMITTING-DIODES;DYNAMICS;GAN
    Date: 2005
    Issue Date: 2010-07-06 18:23:26 (UTC+8)
    Publisher: 中央大學
    Abstract: Transient magneto-optical spectroscopy of InGaN/GaN and InGaN/GaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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