High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-mu m wavelength

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Title:	High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-mu m wavelength
Authors:	Wu,YS;Shi,JW;Wu,JY;Huang,FH;Chan,YJ;Huang,YL;Xuan,R
Contributors:	電機工程研究所
Keywords:	HIGH-SPEED;WAVE-GUIDE;PHOTODETECTORS;BANDWIDTH;TAPER
Date:	2005
Issue Date:	2010-07-06 18:23:46 (UTC+8)
Publisher:	中央大學
Abstract:	In this letter, we demonstrate a high-performance evanescently coupled photodiode (ECPD) with the partially p-doped photoabsorption layer. As compared to the control ECPD with the traditional intrinsic photoabsorption layer, the demonstrated device can ex
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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