Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32318

Title:	Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection
Authors:	Liu,SS;Li,PW;Lan,WH;Lin,WJ
Contributors:	電機工程研究所
Keywords:	SCHOTTKY-BARRIER PHOTODETECTORS;CHEMICAL-VAPOR-DEPOSITION;GAN CAP LAYER;DARK CURRENT;PHOTODIODES;ALXGA1-XN
Date:	2005
Issue Date:	2010-07-06 18:23:57 (UTC+8)
Publisher:	中央大學
Abstract:	AlxGa1-xN/GaN p-i-n UV sensors grown by metal organic chemical vapor deposition (MOCVD) were fabricated for the UV-B (280-320nm) detection. With a proper structure design by including a thin top p-layer and a graded Al,Ga1-xN(x = 0.26 -> 0.13) layer, the
Relation:	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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