Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32346

Title:	Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors
Authors:	Chu,SNG;Ren,F;Pearton,SJ;Kang,BS;Kim,S;Gila,BP;Abernathy,CR;Chyi,JI;Johnson,WJ;Lin,J
Contributors:	電機工程研究所
Keywords:	GA-FACE;HETEROSTRUCTURES;CHARGE;STRAIN;CONDUCTIVITY;TRANSISTORS;SCATTERING;FIELD
Date:	2005
Issue Date:	2010-07-06 18:24:38 (UTC+8)
Publisher:	中央大學
Abstract:	The wurtzite group-III nitrides exhibit piezoelectric polarization along their c-axis. Differential piezoelectric and spontaneous polarizations in strained AlGaN/GaN heterostructure grown on [000 1] sapphire substrates induce two-dimensional electron gas
Relation:	MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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