AlGaN/GaN HEMT based liquid sensors

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32385

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32385

Title:	AlGaN/GaN HEMT based liquid sensors
Authors:	Mehandru,R;Luo,B;Kang,BS;Kim,J;Ren,F;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	ELECTRON-MOBILITY TRANSISTORS;POWER PERFORMANCE;GAN SURFACES;DEVICES;PASSIVATION;DISPERSION;GHZ
Date:	2004
Issue Date:	2010-07-06 18:26:00 (UTC+8)
Publisher:	中央大學
Abstract:	An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH
Relation:	SOLID-STATE ELECTRONICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	491	View/Open

社群 sharing