Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes

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題名:	Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
作者:	Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Thaler,GT;Frazier,RM;Gila,BP;Abernathy,CR;Pearton,SJ;Buyanova,IA;Rudko,GY;Chen,WM;Pan,CC;Chen,GT;Chyi,JI;Zavada,JM
貢獻者:	電機工程研究所
關鍵詞:	MOLECULAR-BEAM-EPITAXY;SPIN INJECTION;ROOM-TEMPERATURE;GAN FILMS;SEMICONDUCTOR HETEROSTRUCTURE;DOPED GAN;MN;FERROMAGNETISM;SPINTRONICS;ORIGIN
日期:	2004
上傳時間:	2010-07-06 18:26:18 (UTC+8)
出版者:	中央大學
摘要:	Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic fi
關聯:	JOURNAL OF ELECTRONIC MATERIALS
顯示於類別:	[電機工程研究所] 期刊論文

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