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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32394


    Title: Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
    Authors: Polyakov,AY;Smirnov,NB;Govorkov,AV;Kim,J;Ren,F;Thaler,GT;Frazier,RM;Gila,BP;Abernathy,CR;Pearton,SJ;Buyanova,IA;Rudko,GY;Chen,WM;Pan,CC;Chen,GT;Chyi,JI;Zavada,JM
    Contributors: 電機工程研究所
    Keywords: MOLECULAR-BEAM-EPITAXY;SPIN INJECTION;ROOM-TEMPERATURE;GAN FILMS;SEMICONDUCTOR HETEROSTRUCTURE;DOPED GAN;MN;FERROMAGNETISM;SPINTRONICS;ORIGIN
    Date: 2004
    Issue Date: 2010-07-06 18:26:18 (UTC+8)
    Publisher: 中央大學
    Abstract: Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic fi
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[電機工程研究所] 期刊論文

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