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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32395


    Title: Electroreflectance study on the polarization field in InGalInGaN multiple quantum wells
    Authors: Hsu,TM;Lai,CY;Chang,WH;Pan,CC;Chuo,CC;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: SPECTROSCOPY
    Date: 2004
    Issue Date: 2010-07-06 18:26:20 (UTC+8)
    Publisher: 中央大學
    Abstract: We present an electroreflectance investigation on the polarization field in InGalInGaN quantum wells (QWs) grown on GaN, in which the AlInGaN barrier is lattice-matched to the GaN substrate. Due to the quantum-confined Stark effect on the QWs, the bias
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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