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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32397

    Title: Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature
    Authors: Li,PW;Liao,WM;Kuo,DMT;Lin,SW;Chen,PS;Lu,SC;Tsai,MJ
    Contributors: 電機工程研究所
    Keywords: OXIDATION
    Date: 2004
    Issue Date: 2010-07-06 18:26:25 (UTC+8)
    Publisher: 中央大學
    Abstract: A simple and complementary metal-oxide-semiconductor-compatible method for fabricating germanium (Ge) single-electron transistors (SETs) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si0.95Ge0.05/Si wires o
    Appears in Collections:[電機工程研究所] 期刊論文

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