High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32404

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Title:	High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
Authors:	Chen,GT;Pan,CC;Fang,CS;Huang,TC;Chyi,JI;Chang,MN;Huang,SB;Hsu,JT
Contributors:	電機工程研究所
Keywords:	LOW-RESISTANCE;N-GAN;METALLIZATION;NI/AU;PD/AU
Date:	2004
Issue Date:	2010-07-06 18:26:39 (UTC+8)
Publisher:	中央大學
Abstract:	Thermal stability, optical reflectivity, and contact resistivity of Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN were investigated. In contrast to its Pd/Al/Ti/Au counterparts, Pd/Ni/Al/Ti/Au contacts retained their specific contact resistivity (<2x10(-2)
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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