Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32407

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32407

Title:	Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors
Authors:	Hwu,MJ;Chju,HC;Yang,SC;Chan,YJ;Chang,LB
Contributors:	電機工程研究所
Date:	2004
Issue Date:	2010-07-06 18:26:45 (UTC+8)
Publisher:	中央大學
Abstract:	The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	598	View/Open

社群 sharing