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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32409

    Title: K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology
    Authors: Chiu,HC;Yang,SC;Lin,CK;Hwu,MJ;Chiou,HK;Chan,YJ
    Contributors: 電機工程研究所
    Date: 2004
    Issue Date: 2010-07-06 18:26:50 (UTC+8)
    Publisher: 中央大學
    Abstract: A K-band (20 GHz) monolithic amplifier was developed and fabricated by adopting a low-kappa benzocyclobutene (BCB) coplanar waveguide (CPW) line and InGaP-InGaAs doped-channel HFETs (DCFETs). This monolithic microwave integrated circuit (MMIC) utilizes a
    Appears in Collections:[電機工程研究所] 期刊論文

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