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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32410


    Title: Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication
    Authors: Wang,WK;Li,YJ;Lin,CK;Chan,YJ;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: PLASMA;GAN
    Date: 2004
    Issue Date: 2010-07-06 18:26:52 (UTC+8)
    Publisher: 中央大學
    Abstract: The traditional dry etching for GaN using the Ar/Cl-2 mixture gas in the reactive ion etching system has been developed. In order to reduce the surface damage, the additional CH4 gas is introduced. However, this approach still has the problems of the resi
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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