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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32412


    Title: Low-k BCB passivation on AlGaN-GaN HEMT fabrication
    Authors: Wang,WK;Lin,CH;Lin,PC;Lin,CK;Huang,FH;Chan,YJ;Chen,GT;Chyi,JI
    Contributors: 電機工程研究所
    Keywords: SURFACE PASSIVATION
    Date: 2004
    Issue Date: 2010-07-06 18:26:56 (UTC+8)
    Publisher: 中央大學
    Abstract: Due to the stress-induced polarization effect on the GaN HEMTs, the surface passivation of the device is critical and is deserved to conduct a detailed study. It has been proven that the GaN HEMTs demonstrate nondispersive pulsed current-voltage (I-V) cha
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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