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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32421

    Title: On the origin of spin loss in GaMnN/InGaN light-emitting diodes
    Authors: Buyanova,IA;Izadifard,M;Chen,WM;Kim,J;Ren,F;Thaler,G;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Zavada,JM
    Contributors: 電機工程研究所
    Date: 2004
    Issue Date: 2010-07-06 18:27:15 (UTC+8)
    Publisher: 中央大學
    Abstract: Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant
    Appears in Collections:[電機工程研究所] 期刊論文

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