English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23175514      Online Users : 350
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32421


    Title: On the origin of spin loss in GaMnN/InGaN light-emitting diodes
    Authors: Buyanova,IA;Izadifard,M;Chen,WM;Kim,J;Ren,F;Thaler,G;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Zavada,JM
    Contributors: 電機工程研究所
    Keywords: DILUTED MAGNETIC SEMICONDUCTORS;GAN
    Date: 2004
    Issue Date: 2010-07-06 18:27:15 (UTC+8)
    Publisher: 中央大學
    Abstract: Spin polarization of GaMnN/InGaN light-emitting diodes grown by molecular beam epitaxy is analyzed. In spite of the ferromagnetic behavior of the GaMnN spin injector, the diodes are shown to exhibit very low efficiency of spin injection. Based on resonant
    Relation: APPLIED PHYSICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    index.html0KbHTML383View/Open


    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明