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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32423


    Title: Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes
    Authors: Buyanova,IA;Izadifard,M;Storasta,L;Chen,WM;Kim,J;Ren,F;Thaler,G;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Zavada,JM
    Contributors: 電機工程研究所
    Keywords: MOLECULAR-BEAM-EPITAXY;ROOM-TEMPERATURE;SPIN INJECTION;SEMICONDUCTOR SPINTRONICS;DOPED GAN;FERROMAGNETISM;FILMS
    Date: 2004
    Issue Date: 2010-07-06 18:27:19 (UTC+8)
    Publisher: 中央大學
    Abstract: (Ga,Mn)N/lnGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the lo
    Relation: JOURNAL OF ELECTRONIC MATERIALS
    Appears in Collections:[電機工程研究所] 期刊論文

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