Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32424

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32424

Title:	Optical and electronic characteristics of germanium quantum dots formed by selective oxidation of SiGe/Si-on-insulator
Authors:	Li,PW;Kuo,DMT;Liao,WM;Tsai,MJ
Contributors:	電機工程研究所
Keywords:	INFRARED PHOTOLUMINESCENCE;VISIBLE PHOTOLUMINESCENCE;ROOM-TEMPERATURE;COULOMB-BLOCKADE;GE NANOCRYSTALS;SI NANOCRYSTALS;CONFINEMENT;LUMINESCENCE;SPECTROSCOPY;MECHANISM
Date:	2004
Issue Date:	2010-07-06 18:27:22 (UTC+8)
Publisher:	中央大學
Abstract:	Germanium quantum dots embedded in a SiO2 matrix fabricated by selective oxidation of SiGe-on-insulator structure were examined by high-resolution, transmission electron microscopy, cathodoluminescence spectroscopy, and spectroscopic ellipsometry. The dot
Relation:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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