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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32425


    Title: Optical study of spin injection dynamics in InGaN/GaN quantum wells with GaMnN injection layers
    Authors: Buyanova,IA;Bergman,JP;Chen,WM;Thaler,G;Frazier,R;Abernathy,CR;Pearton,SJ;Kim,J;Ren,F;Kyrychenko,FV;Stanton,CJ;Pan,CC;Chen,GT;Chyi,J;Zavada,JM
    Contributors: 電機工程研究所
    Keywords: MOLECULAR-BEAM-EPITAXY;LIGHT-EMITTING-DIODES;FERROMAGNETIC SEMICONDUCTORS;MAGNETIC SEMICONDUCTORS;THIN-FILMS;GAN;SPINTRONICS;ORIGIN
    Date: 2004
    Issue Date: 2010-07-06 18:27:24 (UTC+8)
    Publisher: 中央大學
    Abstract: The spin injection dynamics of GaMnN/InGaN multiquantum well (MQW) light emitting diodes (LEDs) grown by molecular beam epitaxy were examined using picosecond-transient and circularly polarized photoluminescence (PL) measurements. Even with the presence o
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    Appears in Collections:[電機工程研究所] 期刊論文

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