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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32433


    Title: Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication
    Authors: Lin,CK;Wang,WK;Hwu,MJ;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: BREAKDOWN;PLATE;HEMTS
    Date: 2004
    Issue Date: 2010-07-06 18:27:40 (UTC+8)
    Publisher: 中央大學
    Abstract: We have developed an asymmetric recess etch in conjunction with a gamma metal gate process for the fabrication of high electron mobility transistors (HEMTs). This process is based on direct electron-beam lithography with a single exposure of a three stack
    Relation: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
    Appears in Collections:[電機工程研究所] 期刊論文

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