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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32439


    Title: Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors
    Authors: Tang,WB;Hsu,HT;Fan,CC;Wang,CH;Li,NY;Hsin,YM
    Contributors: 電機工程研究所
    Keywords: POWER HBTS;BASE
    Date: 2004
    Issue Date: 2010-07-06 18:27:53 (UTC+8)
    Publisher: 中央大學
    Abstract: The temperature effect on current gain is presented for InGaP/InGaAsN/GaAs heterojunction bipolar transistors (HBTs) including as-grown and annealed HBTs. The annealed HBT was annealed before device fabrication at 700 degreesC for 30 sec. Experimental res
    Relation: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
    Appears in Collections:[電機工程研究所] 期刊論文

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