Lateral Schottky GaN rectifiers formed by Si+ ion implantation

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Title:	Lateral Schottky GaN rectifiers formed by Si+ ion implantation
Authors:	Irokawa,Y;Kim,J;Ren,F;Baik,KH;Gila,BP;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	LIQUID-NITROGEN TEMPERATURE;P-GAN;SURFACE EROSION;DAMAGE;BOMBARDMENT;SEMICONDUCTORS;ACTIVATION;DISORDER;NITRIDE;DEFECTS
Date:	2004
Issue Date:	2010-07-06 18:28:11 (UTC+8)
Publisher:	中央大學
Abstract:	Type conversion of p-GaN by direct Si+ ion implantation and subsequent annealing was demonstrated by the fabrication of lateral Schottky diodes. The Si+ activation percentage was measured as a function of annealing time (30-300 see) and temperature (1,000
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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