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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32449


    Title: Si+ ion implanted MPS bulk GaN diodes
    Authors: Irokawa,Y;Kim,J;Ren,F;Baik,KH;Gila,BP;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI;Park,SS
    Contributors: 電機工程研究所
    Keywords: P-I-N;SCHOTTKY RECTIFIERS;BREAKDOWN VOLTAGE;POWER RECTIFIERS;EDGE TERMINATION;DESIGN;PERFORMANCE;SINGLE
    Date: 2004
    Issue Date: 2010-07-06 18:28:13 (UTC+8)
    Publisher: 中央大學
    Abstract: The fabrication of GaN merged p-i-n/Schottky (MPS) diodes using Si+ ion implantation into p-epi layers on bulk, free-standing GaN substrates is reported. Diode diameters from 50 to 500 mum were investigated. These initial NIPS diodes show larger turn-on v
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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