Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

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Title:	Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes
Authors:	Irokawa,Y;Kim,J;Ren,F;Baik,KH;Gila,BP;Abernathy,CR;Pearton,SJ;Pan,CC;Chen,GT;Chyi,JI
Contributors:	電機工程研究所
Keywords:	LIQUID-NITROGEN TEMPERATURE;ION-IMPLANTATION;SURFACE EROSION;BOMBARDMENT;DISORDER;NITRIDE;DAMAGE;SEMICONDUCTORS;DIFFUSION;LOCATION
Date:	2003
Issue Date:	2010-07-06 18:28:42 (UTC+8)
Publisher:	中央大學
Abstract:	The electrical activation characteristics of implanted Si+ in GaN were investigated as a function of annealing temperature (1000 degreesC-1200 degreesC). The maximum activation percentage for an ion dose of 2.5x10(14) cm(-2) was similar to30% with an appa
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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