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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32470


    Title: DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
    Authors: Tu,HY;Chou,TH;Lin,YS;Chiu,HC;Chen,PY;Wu,WC;Lu,SS
    Contributors: 電機工程研究所
    Keywords: INGAP/INGAAS/GAAS
    Date: 2003
    Issue Date: 2010-07-06 18:28:55 (UTC+8)
    Publisher: 中央大學
    Abstract: The dc and RF characteristics of Ga0.49In0.51 P-In0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 mum and a gate width of 200 mum. It is found that the device can be opera
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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